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BC807-40W-AU_R1_000A1 Datasheet
Datasheet specifications
| Datasheet's name | BC807-40W-AU_R1_000A1 |
|---|---|
| File size | 84.2 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet BC807-40W-AU_R1_000A1 |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: PANJIT International BC807-40W-AU_R1_000A1
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 250@100mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 700mV@500mA,50mA
- Package: SOT-323-3
- Manufacturer: PANJIT International